Journal of Semiconductors
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Journal of Semiconductors
2022年1期
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目录
RESEARCH HIGHLIGHTS
Anisotropic 2D materials for post-Moore photoelectric devices
F-containing cations improve the performance of perovskite solar cells
Alkali metal cation engineering in organic/inorganic hybrid perovskite solar cells
NEWS AND VIEWS
All-optical switching based on self-assembled halide perovskite microwires
SHORT COMMUNICATION
A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode
REVIEWS
Twist-angle two-dimensional superlattices and their application in (opto)electronics
I nvestigation on the passivation, band alignment, gate charge,and mobility degradation of the Ge MOSFET with a GeOx /Al2O3 gate stack by ozone oxidation
ARTICLES
I nvestigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers
High-power InAlAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission
High-operating-temperature MWIR photodetector based on a InAs/GaSb superlattice grown by MOCVD
A 58-dBΩ 20-Gb/s inverter-based cascode transimpedance amplifier for optical communications
Band gap tuning and p to n-type transition in Mn-doped CuO nanostructured thin films
Vertical nanowire/nanosheet FETs with a horizontal channel for threshold voltage modulation
Frequency dependence on polarization switching measurement in ferroelectric capacitors