可集成的硅基光互连技术研究

宋国峰　冯雪　黄北举　薛春来　韦欣

摘 要：2013年，该研究针对光互连回路中的关键器件进行了深入的研究，并对新型互连器件和互连方式进行了探索性的研究，取得的主要工作进展包括：硅基片上集成光源方面，探索了有效提高硅基发光材料光辐射效率的技术途径：提出了基于CMOS工艺的硅光发射二极管（LED）等效电路模型，实现了在统一的集成电路环境中发光二极管和专用驱动电路的协同设计；研制了静态和动态集成光发射阵列芯片。进一步研究了金属微纳结构中Purcell效应与发光材料线宽的相互影响关系，表明表面等离子激元（SPP）模式的传播损耗和有源材料发光谱的展宽是获得极高Purcell系数的制约因素；进一步验证了金属纳米条波导（Nanostrip Metallic Waveguide）有助于降低模式体积，是非常适合用于增强硅材料这类宽线宽发光材料发光效率的波导结构。针对基于光子晶体微腔的高速直调光源，提出具有交错空气孔和slot结构的Nanobeam cavity，使微腔Q值的优化过程与模式体积解耦，大大的改善了微腔的调制带宽。在硅基集成调制器方面，对集成芯片中光波模式的调控机制和器件结构进行了研究：提出了新型垂直光接口电光调制器，节省了额外的光分束器插入损耗，并具有大的耦合对准容差。实现了一种微环阵列辅助的马赫-曾德尔干涉儀（MZI）结构的热稳定电光调制器，既保留了MZI调制器温度稳定性高的特点，同时又可大幅减小器件尺寸。为实现硅基集成芯片上对多波长光波信号的传输调控，对多路硅基集成波分复用器、光开关和光衰减器等多种功能器件开展了研究。提出了一种基于Parent-Sub Ring 结构的光分插复用器，利用热光效应制备出4路分插复用器。成功制备出高深宽比的光子晶体和多种调控单元，在此基础上制备出低功耗、高集成度的光开关和光衰减器。研制出SOI衬底上的高速Ge光探测器、波导型探测器和可集成的波导型锗光电探测器，实现了硅基锗光电探测器和硅基电光调制器单片集成的片上光互连。将新型垂直耦合光栅、电光调制器与锗探测器单片集成，从而构成硅基单片光电子集成回路，具有光耦合、光调制以及光探测功能，能够实现4Gb/s速率片上点到点的单通路光互连。对新型光互连方式进行了探索型的研究，提出了利用硅基光学微环构成高速轨道角动量（OAM）动态编码/解码器，在集成芯片上通过OAM编码实现高速无线光通信的解决方案。对全硅集成回路进行了初步的探索，提出了利用硅基Slot型波导在硅材料强吸收波长（800～1 100 nm）获得低传输损耗的方案，为利用硅基光源和硅基探测器构成全硅集成回路提供了可能。

关键词：光互连 硅基光子学 纳米结构 光集成

Abstract：In 2013， the investigation has been focused on the key devices， novel interconnection devices and the interconnecting method. Major progresses have been made as follow. In the investigation of integrated on-chip optical sources based on silicon， the collaborative design of LED and driver circuit in one CMOS environment has been realized， static and dynamic integrating light emission array chips have been developed. Investigation shows the propagation loss of surface plasmon （SPP） mode and the broadening of material emitting line are major limitations for Purcell coefficient. Nanostrip metallic waveguides （NMWs） that can lower the mode volume have been proved to be suitable for improve the light emission efficiency of broad line width material like silicon. A nanobeam cavity with slots and cross air holes has been brought up to the high speed direct modulate optical sources based on photonic crystal cavity， which decoupled the optimization of Q factor and the mode volume， largely improved the modulation width of the cavity. In the investigation of Si-based integrated modulators， a novel vertical light interface device has been brought up to negate the insertion loss and improve the tolerance of alignment. A micro-ring assisted MZI structure thermostabilized modulator has been carried out， cutting down the size of the device. To modulate multi-wavelength light signal in the Si based integrated chip， an 4-route optical add-drop multiplexer （ADM） based on Parent-Sub Ring （PSR） structure has been brought up by utilizing thermo-optic effect. Highly compacted OSWs and attenuators with low power consumption have been realized based on high aspect ratio photonic crystals and multiple modulation units. Based on the SOI substrate， high speed Ge-based PDs， waveguide PDs and integratable waveguide Ge-based PDs are developed. The on-chip optical interconnect between the Si-based Ge PDs and modulators are proposed. The ICs integrated by novel vertical coupling gratings， the modulator and the Ge PDs with the functions such as optical coupling， optical modulating and photodetecting are developed. The research of the novel optical interconnects suggested to utilize the Si-based micro ring high speed orbital angular momentum （OAM） dynamic encoder/decoder to realize the high speed optical communication. A Si-based slot waveguide is suggested to reduce the transmission loss at strong silicon absorbing wavelength.

Key Words：Optical Interconnect；Si-based photonics；Nano-structure；Optical Integrated

阅读全文链接（需实名注册）：http：//www.nstrs.cn/xiangxiBG.aspx？id=50740&flag=1