目录
- Epitaxial graphene gas sensors on SiC substrate with high sensitivity
- Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch
- Influence of self-heating on the millimeter-wave and terahertz performance of MBE grown silicon IMPATT diodes
- First-principles exploration of defect-pairs in GaN
- High performance GaN-based hybrid white micro-LEDs integrated with quantum-dots
- Fabrication of flexible AlGaInP LED
- Enhancement of photocatalytic activity by femtosecond-laser induced periodic surface structures of Si
- 35 km amplifier-less four-level pulse amplitude modulation signals enabled by a 23 GHz ultrabroadband directly modulated laser
- Analysis of the time domain characteristics of tapered semiconductor lasers
- Simulation analysis of a high efficiency GaInP/Si multijunction solar cell
- High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W
- Observation of exciton polariton condensation in a perovskite lattice at room temperature