目录
电子器件辐射效应专栏
- Circuit-level Modeling and Simulation of Single Event Effects in CMOS Electronics
- Physics-based Circuit-level Analysis of MCU Characteristics in Bulk CMOS SRAM
- Degradation Characteristic of Proton Irradiated 8T CMOS Image Sensor
- 10 MeV Proton Radiation Effect on 8-Transistor CMOS Star Sensor Performance
- Radiation-induced Dark Current Random Telegraph Signal on CMOS Image Sensor
- Study on Device Characteristics of High-temperature Radiation-hardened SOI CMOS Process
- Comprehensive Understanding of Hot Carrier Effect of PDSOI NMOS Devices Fabricated on Modified Wafer
- Single-event Burnout Effect on Radiation-hardened High-voltage NMOS
- Dose Detecting of RADFETs Based on PMOS Extended to Elevated Temperature Applications
- Investigation of Ionization-induced Parameter Degradation in GLPNP Bipolar Transistors at Different Temperatures
- Comparative Experimental Study on Space Electrostatic Discharge Effect and Single Event Effect of 130 nm SOI D Flip-flop Chains
- Research on Single Event Transient Effect Protection of Switching Power Supply for Satellite Payload
- Characterization of Single Event Transient in 14 nm FinFET Technology
- High Energy Proton Radiation Effect on Flexible Thin-film Inverted Metamorphic Triple-junction Solar Cell
- Threshold Voltage Model for DSOI MOSFET Considering Back-gate Current
- Testing and Characterization of GaN-based MOSFET at Space Cryogenic Temperature
- Design on Front-end Readout ASIC with Variable Gain and Wide Dynamic Range for 3D Si PIN Array Thermal Neutron Detector
- Primary Testing Performance of Designed Wide-dynamic Range Gamma Ray Dosimeter Based on Double GM Counters
- Adverse Effect of Inappropriately Implementing Source-isolation Mitigation Technique
- Analysis of Cavity SGEMP of Cylindrical Cavity at Pulsed Power Facility
- Effects of Electron Irradiation at Different Energy and Fluences on Electrical Properties of InP HEMT Structure
- Simulation of X-ray-induced EMI Environment in Shell of SIP
物理
化学
技术及应用