目录
- Numerical study of mono-crystalline silicon solar cells with passivated emitter and rear contact configuration for the efficiency beyond 24% based on mass production technology
- Modelling and optical response of a compressive-strained AlGaN/GaN quantum well laser diode
- Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ·cm2
- Strain-induced the dark current characteristics in InAs/GaSb type-II superlattice for mid-wave detector
- A 0.1-1.5 GHz multi-octave quadruple-stacked CMOS power amplifier
- A high performance adaptive on-time controlled valley-currentmode DC-DC buck converter
- An 18-bit sigma -delta switched-capacitor modulator using 4-order single-loop CIFB architecture
- Variation tolerance for high-speed negative capacitance FinFET SRAM bit cell
- A brief review of formation energies calculation of surfaces and edges in semiconductors
- A review on performance comparison of advanced MOSFET structures below 45 nm technology node
- Coupling between quantum dots and photonic nanostructures
- 1064 nm InGaAsP multi-junction laser power converters
- Mathematical analysis of organic-pass transistor using pseudo-p-OTFTs