目录
- Research on the photoluminescence of spectral broadening by rapid thermal annealing on InAs/GaAs quantum dots
- The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET
- The etching process and mechanism analysis of Ta-Sb2Te3 film based on inductively coupled plasma
- Small molecule donors with different conjugated π linking bridges: Synthesis and photovoltaic properties
- Self-powered circularly polarized light detector based on asymmetric chiral metamaterials
- A 16-bit 1 MSPS SAR ADC with foreground calibration and residual voltage shift strategy
- Theoretical study of a group IV p–i–n photodetector with a flat and broad response for visible and infrared detection
- Design of GGNMOS ESD protection device for radiationhardened 0.18 μm CMOS process
- Prediction and observation of defect-induced room-temperature ferromagnetism in halide perovskites
- An antiferromagnetic two-dimensional material: Chromium diiodides monolayer
- Effects of high temperature annealing and laser irradiation on activation rate of phosphorus
- Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond
- Comprehensive study of crystalline AlN/sapphire templates after high-temperature annealing with various sputtering conditions
- RF performance evaluation of p-type NiO-pocket based β-Ga2O3/black phosphorous heterostructure MOSFET