目录
- Silicon photonic transceivers for application in data centers
- Study of electrophysical properties of metal–semiconductor contact by the theory of complex systems
- First principles study of the electronic structure and photovoltaic properties of β-CuGaO2 with MBJ + U approach
- Nanoflower ZnO thin-film grown by hydrothermal technique based Schottky diode
- Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes
- Design, modelling, and simulation of a floating gate transistor with a novel security feature
- Design of CMOS active pixels based on finger-shaped PPD
- Comparative study of various methods for extraction of multiquantum wells Schottky diode parameters
- A snapback-free and high-speed SOI LIGBT with double trenches and embedded fully NPN structure
- Wireless communication and wireless power transfer system for implantable medical device
- A 0.5–3.0 GHz SP4T RF switch with improved body self-biasing technique in 130-nm SOI CMOS
- Defect levels in d-electron containing systems: Comparative study of CdTe using LDA and LDA + U
- S uppression of oxygen and carbon impurity deposition in the thermal system of Czochralski monocrystalline silicon
- 4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P+ shielding region
- I nvestigation of current collapse and recovery time due to deep level defect traps in β-Ga2O3 HEMT